K9LCG08U1M vs K9F2808Q0B Perbandingan
Perbandingan bersamaan detil K9LCG08U1M dari Samsung Electronics dan K9F2808Q0B dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
K9F2808Q0B ✗ Akhir HidupPerbandingan Spesifikasi
| Parameter Umum | K9LCG08U1M | K9F2808Q0B |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Akhir Hidup |
| Tipe Memori | NAND Flash, MLC | SLC NAND Flash (parallel) |
| Density | 64 Gbit (8 GB) | 128 Mbit |
| Organisasi | x8 I/O | 16M x 8 |
| Antarmuka | Asynchronous multiplexed NAND I/O | 8-bit multiplexed address/data |
| Cell Type | MLC (2 bits per cell) | SLC (1 bit/cell) |
| Paket | BGA | 63-pin TBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Tegangan Pemuat | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Status RoHS | unknown | unknown |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Operating Voltage (VCC) | — | 1.7 V to 1.95 V |
| Read Access Speed | — | 50 ns |
| Temperature Grade | — | C (commercial), I (industrial) |
| Typical Read Current (Icc1) | — | [DATA_NEEDED: Icc1] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Production Status | — | Mass production (per legacy datasheet); now EOL/obsolete |