K9LCG08U1M vs K9F2808Q0B Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9LCG08U1M disebabkan oleh Samsung Electronics dan K9F2808Q0B disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
K9F2808Q0B ✗ Akhir HayatPengandingan Spesifikasi
| Parametr | K9LCG08U1M | K9F2808Q0B |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Akhir Hidup |
| Jenis Ingatan | NAND Flash, MLC | SLC NAND Flash (parallel) |
| Density | 64 Gbit (8 GB) | 128 Mbit |
| Organisasi | x8 I/O | 16M x 8 |
| Antaramuka | Asynchronous multiplexed NAND I/O | 8-bit multiplexed address/data |
| Cell Type | MLC (2 bits per cell) | SLC (1 bit/cell) |
| Kemasan | BGA | 63-pin TBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Tegangan Pemberi Arus | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Status RoHS | unknown | unknown |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Operating Voltage (VCC) | — | 1.7 V to 1.95 V |
| Read Access Speed | — | 50 ns |
| Temperature Grade | — | C (commercial), I (industrial) |
| Typical Read Current (Icc1) | — | [DATA_NEEDED: Icc1] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Production Status | — | Mass production (per legacy datasheet); now EOL/obsolete |