K9XXG08U0M vs K9MDG08U5M Perbandingan
Perbandingan bersamaan detil K9XXG08U0M dari Samsung Electronics dan K9MDG08U5M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K9XXG08U0M | K9MDG08U5M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Tipe Memori | NAND Flash | MLC Large Block NAND Flash |
| Density | 8 G-bit | 16 Gbit (2 GB) |
| Organisasi | 1G x 8 bit | 16G x 8 bit |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| Tegangan Pemuat | 2.7 V to 3.6 V (3.3V device) | — |
| Antarmuka | 8-bit parallel NAND (command/address/data multiplexed) | Asynchronous x8 multiplexed address/data |
| Page Read Time | 20 us | — |
| Paket | 48-pin TSOP-I | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | MLC (2 bits per cell) |
| ECC Requirement | External ECC by host controller | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |