K9XXG08U0M vs K9MDG08U5M Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K9XXG08U0M sa pamamagitan ng Samsung Electronics at K9MDG08U5M sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K9XXG08U0M | K9MDG08U5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Uri ng Memory | NAND Flash | MLC Large Block NAND Flash |
| Density | 8 G-bit | 16 Gbit (2 GB) |
| Organisasyon | 1G x 8 bit | 16G x 8 bit |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| Volte ng Pagbibigay | 2.7 V to 3.6 V (3.3V device) | — |
| Interface | 8-bit parallel NAND (command/address/data multiplexed) | Asynchronous x8 multiplexed address/data |
| Page Read Time | 20 us | — |
| Packhaging | 48-pin TSOP-I | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | MLC (2 bits per cell) |
| ECC Requirement | External ECC by host controller | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |