K9XXG08U0M vs K9MDG08U5M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K9XXG08U0M disebabkan oleh Samsung Electronics dan K9MDG08U5M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K9XXG08U0M | K9MDG08U5M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Jenis Ingatan | NAND Flash | MLC Large Block NAND Flash |
| Density | 8 G-bit | 16 Gbit (2 GB) |
| Organisasi | 1G x 8 bit | 16G x 8 bit |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V (3.3V device) | — |
| Antaramuka | 8-bit parallel NAND (command/address/data multiplexed) | Asynchronous x8 multiplexed address/data |
| Page Read Time | 20 us | — |
| Kemasan | 48-pin TSOP-I | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | MLC (2 bits per cell) |
| ECC Requirement | External ECC by host controller | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |