M29F160FB55N3F2 vs M29F160FB55N3E2 Perbandingan

Perbandingan bersamaan detil M29F160FB55N3F2 dari Micron Technology dan M29F160FB55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete
Micron Technology
M29F160FB55N3E2 M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 - 16Mbit 55ns 5V NOR Flash | Micron

M29F160FB55N3E2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F160FB55N3F2 M29F160FB55N3E2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Obsolete Aktif
Tipe Memori Parallel NOR Flash NOR Flash - Parallel, Asynchronous
Density 16777 kbits (16 Mbit) 16777 kbits (16 Mbit)
Organisasi 1 Mword x 16 bits / 2 Mbyte x 8 bits 1 M x 16 / 2 M x 8
Number of Words 1000 k 1000 k
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
Tegangan Pemuat 5 V —
Boot Block Architecture Bottom Boot Block —
Suhu Kerja -40 to +125 C -40 C to +125 C
Antarmuka Parallel Parallel
Package Type 48-TSOP —
Tipe Mounting Surface Mount Surface Mount
Termination Finish Lead-free (F2 suffix) —
Program/Erase Controller Embedded byte/word program algorithms —
Block Protection Hardware boot block protection —
Status RoHS Compliant (lead-free) ROHS3 Compliant
Speed Grade (from MPN) 55 (55 ns) —
Supply Voltage (VCC) — 5 V
Boot Block — Bottom Boot Block (FB)
Programming Algorithm — Embedded byte/word program and erase controller
Paket — 48-TSOP I
Packaging — Tray
Lead Free Status — Lead Free

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