M29F160FB55N3F2 vs M29F160FB55N3E2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F160FB55N3F2 disebabkan oleh Micron Technology dan M29F160FB55N3E2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29F160FB55N3F2 | M29F160FB55N3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Jenis Ingatan | Parallel NOR Flash | NOR Flash - Parallel, Asynchronous |
| Density | 16777 kbits (16 Mbit) | 16777 kbits (16 Mbit) |
| Organisasi | 1 Mword x 16 bits / 2 Mbyte x 8 bits | 1 M x 16 / 2 M x 8 |
| Number of Words | 1000 k | 1000 k |
| Bits per Word | 16 bits | 16 bits |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemberi Arus | 5 V | — |
| Boot Block Architecture | Bottom Boot Block | — |
| Suhu Operasi | -40 to +125 C | -40 C to +125 C |
| Antaramuka | Parallel | Parallel |
| Package Type | 48-TSOP | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Termination Finish | Lead-free (F2 suffix) | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Block Protection | Hardware boot block protection | — |
| Status RoHS | Compliant (lead-free) | ROHS3 Compliant |
| Speed Grade (from MPN) | 55 (55 ns) | — |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block | — | Bottom Boot Block (FB) |
| Programming Algorithm | — | Embedded byte/word program and erase controller |
| Kemasan | — | 48-TSOP I |
| Packaging | — | Tray |
| Lead Free Status | — | Lead Free |