M29F160FB55N3F2 vs M29W160EB70N3E Perbandingan
Perbandingan bersamaan detil M29F160FB55N3F2 dari Micron Technology dan M29W160EB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29F160FB55N3F2 | M29W160EB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Tipe Memori | Parallel NOR Flash | FLASH - NOR |
| Density | 16777 kbits (16 Mbit) | — |
| Organisasi | 1 Mword x 16 bits / 2 Mbyte x 8 bits | 2M x8 / 1M x16 |
| Number of Words | 1000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 70 ns |
| Tegangan Pemuat | 5 V | — |
| Boot Block Architecture | Bottom Boot Block | — |
| Suhu Kerja | -40 to +125 C | -40C to +125C |
| Antarmuka | Parallel | Parallel |
| Package Type | 48-TSOP | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Termination Finish | Lead-free (F2 suffix) | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Block Protection | Hardware boot block protection | — |
| Status RoHS | Compliant (lead-free) | [DATA_NEEDED: RoHS status] |
| Speed Grade (from MPN) | 55 (55 ns) | — |
| Ukuran Memori | — | 16 Mbit (2M x8, 1M x16) |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming Time | — | 10 us (typical) |
| Cell Type | — | SLC NOR |
| Paket / Case | — | 48-TFSOP (0.724 in, 18.40 mm width) |
| Packaging | — | Tray |
| Speed Grade | — | -70 |
| FBGA Code | — | N/A (TSOP package) |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |