M29F160FB55N3F2 vs M29W160EB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F160FB55N3F2 disebabkan oleh Micron Technology dan M29W160EB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29F160FB55N3F2 | M29W160EB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Jenis Ingatan | Parallel NOR Flash | FLASH - NOR |
| Density | 16777 kbits (16 Mbit) | — |
| Organisasi | 1 Mword x 16 bits / 2 Mbyte x 8 bits | 2M x8 / 1M x16 |
| Number of Words | 1000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 70 ns |
| Tegangan Pemberi Arus | 5 V | — |
| Boot Block Architecture | Bottom Boot Block | — |
| Suhu Operasi | -40 to +125 C | -40C to +125C |
| Antaramuka | Parallel | Parallel |
| Package Type | 48-TSOP | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Termination Finish | Lead-free (F2 suffix) | — |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Block Protection | Hardware boot block protection | — |
| Status RoHS | Compliant (lead-free) | [DATA_NEEDED: RoHS status] |
| Speed Grade (from MPN) | 55 (55 ns) | — |
| Saiz Ingatan | — | 16 Mbit (2M x8, 1M x16) |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming Time | — | 10 us (typical) |
| Cell Type | — | SLC NOR |
| Kemasan / Case | — | 48-TFSOP (0.724 in, 18.40 mm width) |
| Packaging | — | Tray |
| Speed Grade | — | -70 |
| FBGA Code | — | N/A (TSOP package) |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |