M29F160FT55N3F2 vs M29F200FT55N3F2 Perbandingan

Perbandingan bersamaan detil M29F160FT55N3F2 dari Micron Technology dan M29F200FT55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ Aktif
Micron Technology
M29F200FT55N3F2 M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F160FT55N3F2 M29F200FT55N3F2
Merek Micron Technology Micron Technology
Kategori Flash Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash (Parallel, Asynchronous) NOR Flash, Parallel
Density 16 Mbit (16777 kbits) 2 Mbit (2097 kbits)
Organisasi 1M x 16 / 2M x 8 256K x 8-bit / 128K x 16-bit
Number of Words 1000 k 128 K
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V (operating 4.5 V) 5 V
Antarmuka Parallel Parallel, BYTE pin selects 8/16-bit bus
Synchronous / Asynchronous Asynchronous —
Boot Block Location Top boot block (FT) —
Suhu Kerja -40C to +125C -40C to +125C
Paket 48-Pin TSOP 48-pin TSOP
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel Tape & Reel (TR suffix)
Program / Erase Embedded byte/word program algorithms (controller on-chip) —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Level MSL [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Boot Block Architecture — Top Boot Block
Program/Erase — Embedded byte/word program algorithms

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