M29F160FT55N3F2 vs M29F200FT55N3F2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng M29F160FT55N3F2 sa pamamagitan ng Micron Technology at M29F200FT55N3F2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ Nakahanda
Micron Technology
M29F200FT55N3F2 M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro M29F160FT55N3F2 M29F200FT55N3F2
Brand Micron Technology Micron Technology
Kategorya Flash Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory NOR Flash (Parallel, Asynchronous) NOR Flash, Parallel
Density 16 Mbit (16777 kbits) 2 Mbit (2097 kbits)
Organisasyon 1M x 16 / 2M x 8 256K x 8-bit / 128K x 16-bit
Number of Words 1000 k 128 K
Bits per Word 16 bits 16 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V (operating 4.5 V) 5 V
Interface Parallel Parallel, BYTE pin selects 8/16-bit bus
Synchronous / Asynchronous Asynchronous —
Boot Block Location Top boot block (FT) —
Temperature na Operasyon -40C to +125C -40C to +125C
Packhaging 48-Pin TSOP 48-pin TSOP
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Tape & Reel Tape & Reel (TR suffix)
Program / Erase Embedded byte/word program algorithms (controller on-chip) —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Level ng MSL [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Boot Block Architecture — Top Boot Block
Program/Erase — Embedded byte/word program algorithms

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