M29F160FT55N3F2 vs M29F800FT55N3F2 Perbandingan
Perbandingan bersamaan detil M29F160FT55N3F2 dari Micron Technology dan M29F800FT55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology
M29F160FT55N3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F160FT55N3F2 | M29F800FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash (Parallel, Asynchronous) | NOR Flash, Parallel |
| Density | 16 Mbit (16777 kbits) | — |
| Organisasi | 1M x 16 / 2M x 8 | 1M x 8 bit / 512K x 16 bit |
| Number of Words | 1000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V (operating 4.5 V) | — |
| Antarmuka | Parallel | Parallel |
| Synchronous / Asynchronous | Asynchronous | — |
| Boot Block Location | Top boot block (FT) | — |
| Suhu Kerja | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Paket | 48-Pin TSOP | 48-pin TSOP |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | Tape & Reel (T/R) |
| Program / Erase | Embedded byte/word program algorithms (controller on-chip) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Ukuran Memori | — | 8 Mbit |
| Tegangan Pemuat | — | 5 V (single supply) |
| Boot Block Architecture | — | Top boot block (T) |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |