M29F160FT55N3F2 vs M29F800FT55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F160FT55N3F2 disebabkan oleh Micron Technology dan M29F800FT55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology
M29F160FT55N3F2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F160FT55N3F2 | M29F800FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash (Parallel, Asynchronous) | NOR Flash, Parallel |
| Density | 16 Mbit (16777 kbits) | — |
| Organisasi | 1M x 16 / 2M x 8 | 1M x 8 bit / 512K x 16 bit |
| Number of Words | 1000 k | — |
| Bits per Word | 16 bits | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V (operating 4.5 V) | — |
| Antaramuka | Parallel | Parallel |
| Synchronous / Asynchronous | Asynchronous | — |
| Boot Block Location | Top boot block (FT) | — |
| Suhu Operasi | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 48-Pin TSOP | 48-pin TSOP |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | Tape & Reel (T/R) |
| Program / Erase | Embedded byte/word program algorithms (controller on-chip) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Aras MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Saiz Ingatan | — | 8 Mbit |
| Tegangan Pemberi Arus | — | 5 V (single supply) |
| Boot Block Architecture | — | Top boot block (T) |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |