M29F200FB55N3F2 vs M29F200FB55N3E2 Perbandingan

Perbandingan bersamaan detil M29F200FB55N3F2 dari Micron Technology dan M29F200FB55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F200FB55N3F2 M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron

M29F200FB55N3F2 ✓ Aktif
Micron Technology
M29F200FB55N3E2 M29F200FB55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron

M29F200FB55N3E2 - 2Mbit 5V NOR Flash 55ns TSOP-48 | Micron

M29F200FB55N3E2 ✗ Akhir Hidup

Perbandingan Spesifikasi

Parameter Umum M29F200FB55N3F2 M29F200FB55N3E2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Akhir Hidup
Tipe Memori Parallel NOR Flash NOR Flash, Parallel
Density 2 Mbit (2097 kbits) 2 Mbit (2097 kbits)
Organisasi 256K x 8 bit / 128K x 16 bit 256K x 8 / 128K x 16
Number of Words 128 K (x16 mode) 128 K
Bits per Word 16 bits 16 bits
Supply Voltage (VCC) 5 V 5 V
Access Time 55 ns 55 ns
Boot Block Architecture Bottom Boot Block (FB) Bottom Boot Block
Programming Embedded byte/word program algorithm —
Erase Embedded block erase controller —
Suhu Kerja -40C to +125C -40C to +125C
Paket 48-TSOP I —
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel (TR) Tray
Antarmuka Parallel Parallel, 8/16-bit selectable
Status RoHS [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Endurance [DATA_NEEDED: program/erase cycles] —
Program/Erase Controller — Embedded byte/word program algorithms
Package Type — 48-pin TSOP I
Memory Cell Type — SLC NOR

Spek dan Sumber

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