M29F200FB55N3F2 vs M29F400FB55N3F2 Perbandingan
Perbandingan bersamaan detil M29F200FB55N3F2 dari Micron Technology dan M29F400FB55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron
M29F200FB55N3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F200FB55N3F2 | M29F400FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | Parallel NOR Flash | NOR Flash |
| Density | 2 Mbit (2097 kbits) | 4 Mbit (4194 kbit) |
| Organisasi | 256K x 8 bit / 128K x 16 bit | 256K x 16 / 512K x 8 |
| Number of Words | 128 K (x16 mode) | — |
| Bits per Word | 16 bits | — |
| Supply Voltage (VCC) | 5 V | — |
| Access Time | 55 ns | 55 ns |
| Boot Block Architecture | Bottom Boot Block (FB) | — |
| Programming | Embedded byte/word program algorithm | — |
| Erase | Embedded block erase controller | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket | 48-TSOP I | 48-TSOP I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Antarmuka | Parallel | Parallel |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free build per F2 suffix) |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Tegangan Pemuat | — | 5 V |
| Boot Block | — | Bottom boot block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Standard Package Quantity | — | 1500 units (Tape & Reel) |
| Active/Standby Current | — | [DATA_NEEDED: active and standby current] |
| Erase/Program Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| VIO Range | — | [DATA_NEEDED: I/O voltage range] |