M29F200FB55N3F2 vs M29F400FB55N3F2 比較
詳細並排比較 M29F200FB55N3F2 由 Micron Technology 與 M29F400FB55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F200FB55N3F2 | M29F400FB55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Parallel NOR Flash | NOR Flash |
| Density | 2 Mbit (2097 kbits) | 4 Mbit (4194 kbit) |
| 組織 | 256K x 8 bit / 128K x 16 bit | 256K x 16 / 512K x 8 |
| Number of Words | 128 K (x16 mode) | — |
| Bits per Word | 16 bits | — |
| Supply Voltage (VCC) | 5 V | — |
| Access Time | 55 ns | 55 ns |
| Boot Block Architecture | Bottom Boot Block (FB) | — |
| Programming | Embedded byte/word program algorithm | — |
| Erase | Embedded block erase controller | — |
| 工作溫度 | -40C to +125C | -40C to +125C |
| 封裝 | 48-TSOP I | 48-TSOP I |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| 介面 | Parallel | Parallel |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free build per F2 suffix) |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| 供應電壓 | — | 5 V |
| Boot Block | — | Bottom boot block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Standard Package Quantity | — | 1500 units (Tape & Reel) |
| Active/Standby Current | — | [DATA_NEEDED: active and standby current] |
| Erase/Program Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| VIO Range | — | [DATA_NEEDED: I/O voltage range] |