M29F200FB55N3F2 vs M29F400FB55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F200FB55N3F2 disebabkan oleh Micron Technology dan M29F400FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F200FB55N3F2 - 2Mbit 5V NOR Flash 55ns 48-TSOP | Micron
M29F200FB55N3F2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F200FB55N3F2 | M29F400FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | Parallel NOR Flash | NOR Flash |
| Density | 2 Mbit (2097 kbits) | 4 Mbit (4194 kbit) |
| Organisasi | 256K x 8 bit / 128K x 16 bit | 256K x 16 / 512K x 8 |
| Number of Words | 128 K (x16 mode) | — |
| Bits per Word | 16 bits | — |
| Supply Voltage (VCC) | 5 V | — |
| Access Time | 55 ns | 55 ns |
| Boot Block Architecture | Bottom Boot Block (FB) | — |
| Programming | Embedded byte/word program algorithm | — |
| Erase | Embedded block erase controller | — |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Kemasan | 48-TSOP I | 48-TSOP I |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Antaramuka | Parallel | Parallel |
| Status RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free build per F2 suffix) |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Tegangan Pemberi Arus | — | 5 V |
| Boot Block | — | Bottom boot block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Standard Package Quantity | — | 1500 units (Tape & Reel) |
| Active/Standby Current | — | [DATA_NEEDED: active and standby current] |
| Erase/Program Endurance | — | [DATA_NEEDED: endurance cycles] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| VIO Range | — | [DATA_NEEDED: I/O voltage range] |