M29F400FT55M3E2 vs M29F800FT55N3E2 Perbandingan

Perbandingan bersamaan detil M29F400FT55M3E2 dari Micron Technology dan M29F800FT55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F400FT55M3E2 M29F400FT55M3E2 - 4Mbit 55ns 5V Parallel NOR Flash | Micron

M29F400FT55M3E2 - 4Mbit 55ns 5V Parallel NOR Flash | Micron

M29F400FT55M3E2 ✓ Aktif
Micron Technology
M29F800FT55N3E2 M29F800FT55N3E2 - 8Mb 5V Parallel NOR Flash 55ns | Micron

M29F800FT55N3E2 - 8Mb 5V Parallel NOR Flash 55ns | Micron

M29F800FT55N3E2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F400FT55M3E2 M29F800FT55N3E2
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash NOR Flash
Ukuran Memori 4 Mbit (4194 kbits) —
Organisasi 512K x 8 / 256K x 16 —
Antarmuka Parallel Parallel
Access Time 55 ns 55 ns
Tegangan Pemuat 5 V 5 V
Number of Words 256 k —
Bits per Word 16 bits —
Programming Embedded byte/word program algorithms —
Erase Embedded program/erase controller, block erase —
Boot Block Top boot block —
Suhu Kerja -40 C to +125 C -40C to +125C
Paket 44-SO (SOP-44) 48-TSOP I
Tipe Mounting Surface Mount Surface Mount
Packaging Tray —
Status RoHS Compliant Compliant (E suffix = lead-free/RoHS)
Memory Organization — 512K x 16 (8 Mbit)
Density — 8389 kbits
Boot Block Architecture — Top Boot Block
Word/Byte Configuration — BYTE# pin selectable (16-bit / 8-bit)
Hardware Reset / Power-Down — RP# pin
Embedded Program/Erase Controller — Yes (byte/word program, block erase)
Program/Erase Endurance — 100,000 cycles per block (typical for family)
Data Retention — >20 years (typical for family)
Ready/Busy Output — Yes

Spek dan Sumber

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