M29F400FT55M3E2 vs M29F800FT55N3E2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F400FT55M3E2 disebabkan oleh Micron Technology dan M29F800FT55N3E2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F400FT55M3E2 - 4Mbit 55ns 5V Parallel NOR Flash | Micron
M29F400FT55M3E2 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | M29F400FT55M3E2 | M29F800FT55N3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash |
| Saiz Ingatan | 4 Mbit (4194 kbits) | — |
| Organisasi | 512K x 8 / 256K x 16 | — |
| Antaramuka | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemberi Arus | 5 V | 5 V |
| Number of Words | 256 k | — |
| Bits per Word | 16 bits | — |
| Programming | Embedded byte/word program algorithms | — |
| Erase | Embedded program/erase controller, block erase | — |
| Boot Block | Top boot block | — |
| Suhu Operasi | -40 C to +125 C | -40C to +125C |
| Kemasan | 44-SO (SOP-44) | 48-TSOP I |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Status RoHS | Compliant | Compliant (E suffix = lead-free/RoHS) |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Density | — | 8389 kbits |
| Boot Block Architecture | — | Top Boot Block |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Program/Erase Endurance | — | 100,000 cycles per block (typical for family) |
| Data Retention | — | >20 years (typical for family) |
| Ready/Busy Output | — | Yes |