M29F800FB55N3E2 vs M29F800FB55N3F2 Perbandingan
Perbandingan bersamaan detil M29F800FB55N3E2 dari Micron Technology dan M29F800FB55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FB55N3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F800FB55N3E2 | M29F800FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Ukuran Memori | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| Tipe Memori | NOR Flash, SLC, Parallel | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| Antarmuka | Parallel | — |
| Organisasi | Bottom boot (B suffix) | 1M x 8 / 512K x 16 |
| Lebar Bus Data | 8-bit or 16-bit (BYTE# selectable) | — |
| Paket | 48-pin TSOP Type I (N suffix) | — |
| Tipe Mounting | Surface Mount (SMD/SMT) | Surface Mount |
| Suhu Kerja | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| Status RoHS | Compliant (E suffix) | Compliant (lead-free terminations) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Memory Density | — | 8389 kbits (8 Mbit) |
| Tegangan Pemuat | — | 5 V |
| Tipe Antarmuka | — | Parallel NOR |
| Boot Block Architecture | — | Bottom Boot Block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Package Type | — | 48-pin TSOP1 |
| Package Shape | — | Rectangular (JESD designation TSOP1) |
| Terminal Count | — | 48 |
| JESD-609 Termination Code | — | e3 (lead-free) |
| Packaging | — | Tape & Reel (T/R) |