M29F800FB55N3E2 vs M29F800FB55N3F2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29F800FB55N3E2 disebabkan oleh Micron Technology dan M29F800FB55N3F2 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FB55N3F2 ✓ AktifPengandingan Spesifikasi
| Parametr | M29F800FB55N3E2 | M29F800FB55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Saiz Ingatan | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| Jenis Ingatan | NOR Flash, SLC, Parallel | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| Antaramuka | Parallel | — |
| Organisasi | Bottom boot (B suffix) | 1M x 8 / 512K x 16 |
| Lebar Bus Data | 8-bit or 16-bit (BYTE# selectable) | — |
| Kemasan | 48-pin TSOP Type I (N suffix) | — |
| Jenis Pemasangan | Surface Mount (SMD/SMT) | Surface Mount |
| Suhu Operasi | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| Status RoHS | Compliant (E suffix) | Compliant (lead-free terminations) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Memory Density | — | 8389 kbits (8 Mbit) |
| Tegangan Pemberi Arus | — | 5 V |
| Jenis Antaramuka | — | Parallel NOR |
| Boot Block Architecture | — | Bottom Boot Block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Package Type | — | 48-pin TSOP1 |
| Package Shape | — | Rectangular (JESD designation TSOP1) |
| Terminal Count | — | 48 |
| JESD-609 Termination Code | — | e3 (lead-free) |
| Packaging | — | Tape & Reel (T/R) |