M29F800FB55N3E2 vs M29F800FB55N3F2 比較
詳細並排比較 M29F800FB55N3E2 由 Micron Technology 與 M29F800FB55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F800FB55N3E2 | M29F800FB55N3F2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體容量 | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| 記憶體類型 | NOR Flash, SLC, Parallel | — |
| Access Time | 55 ns | 55 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| 介面 | Parallel | — |
| 組織 | Bottom boot (B suffix) | 1M x 8 / 512K x 16 |
| 資料匯流排寬度 | 8-bit or 16-bit (BYTE# selectable) | — |
| 封裝 | 48-pin TSOP Type I (N suffix) | — |
| 安裝類型 | Surface Mount (SMD/SMT) | Surface Mount |
| 工作溫度 | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| RoHS 狀態 | Compliant (E suffix) | Compliant (lead-free terminations) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Memory Density | — | 8389 kbits (8 Mbit) |
| 供應電壓 | — | 5 V |
| 介面類型 | — | Parallel NOR |
| Boot Block Architecture | — | Bottom Boot Block |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Package Type | — | 48-pin TSOP1 |
| Package Shape | — | Rectangular (JESD designation TSOP1) |
| Terminal Count | — | 48 |
| JESD-609 Termination Code | — | e3 (lead-free) |
| Packaging | — | Tape & Reel (T/R) |