M29F800FT55N3E2 vs M29F400FT55N3E2 Perbandingan
Perbandingan bersamaan detil M29F800FT55N3E2 dari Micron Technology dan M29F400FT55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F800FT55N3E2 | M29F400FT55N3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash (Parallel) |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 4 Mbit (512K x 8) |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V | 5 V (single supply) |
| Antarmuka | Parallel | Parallel |
| Boot Block Architecture | Top Boot Block | Top boot (FT variant) |
| Suhu Kerja | -40C to +125C | [DATA_NEEDED: Operating Temperature Range] |
| Paket | 48-TSOP I | 44-SO (SOP-44) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | [DATA_NEEDED: Program/Erase Cycles] |
| Data Retention | >20 years (typical for family) | [DATA_NEEDED: Data Retention] |
| Ready/Busy Output | Yes | — |
| Status RoHS | Compliant (E suffix = lead-free/RoHS) | [DATA_NEEDED: RoHS Status] |
| Programming Supply | — | No 12 V VPP required (5.0 V programming) |
| Command Set | — | JEDEC standard compatible |
| Active Read Current | — | [DATA_NEEDED: Active Current] |
| Standby Current | — | [DATA_NEEDED: Standby Current] |
| Block Protection | — | Hardware block protection |
| Level MSL | — | [DATA_NEEDED: Moisture Sensitivity Level] |