M29F800FT55N3E2 vs M29F400FT55N3E2 Karşılaştırma
Ayrıntılı yan yana karşılaştırma M29F800FT55N3E2 tarafından Micron Technology ve M29F400FT55N3E2 tarafından Micron TechnologyAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ AktifÖzellik Karşılaştırması
| Parametre | M29F800FT55N3E2 | M29F400FT55N3E2 |
|---|---|---|
| Marka | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Bellek Türü | NOR Flash | NOR Flash (Parallel) |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 4 Mbit (512K x 8) |
| Access Time | 55 ns | 55 ns |
| Besleme Gerilimi | 5 V | 5 V (single supply) |
| Arayüz | Parallel | Parallel |
| Boot Block Architecture | Top Boot Block | Top boot (FT variant) |
| İşletim Sıcaklığı | -40C to +125C | [DATA_NEEDED: Operating Temperature Range] |
| Paket | 48-TSOP I | 44-SO (SOP-44) |
| Montaj Türü | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | [DATA_NEEDED: Program/Erase Cycles] |
| Data Retention | >20 years (typical for family) | [DATA_NEEDED: Data Retention] |
| Ready/Busy Output | Yes | — |
| RoHS Durumu | Compliant (E suffix = lead-free/RoHS) | [DATA_NEEDED: RoHS Status] |
| Programming Supply | — | No 12 V VPP required (5.0 V programming) |
| Command Set | — | JEDEC standard compatible |
| Active Read Current | — | [DATA_NEEDED: Active Current] |
| Standby Current | — | [DATA_NEEDED: Standby Current] |
| Block Protection | — | Hardware block protection |
| MSL Seviyesi | — | [DATA_NEEDED: Moisture Sensitivity Level] |