M29F800FT55N3E2 vs M29F400FT55N3E2 比較
詳細並排比較 M29F800FT55N3E2 由 Micron Technology 與 M29F400FT55N3E2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29F400FT55N3E2 - 4Mbit 5V Parallel NOR Flash, 55ns | Micron
M29F400FT55N3E2 ✓ 啟用中規格比較
| 參數 | M29F800FT55N3E2 | M29F400FT55N3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | NOR Flash (Parallel) |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 4 Mbit (512K x 8) |
| Access Time | 55 ns | 55 ns |
| 供應電壓 | 5 V | 5 V (single supply) |
| 介面 | Parallel | Parallel |
| Boot Block Architecture | Top Boot Block | Top boot (FT variant) |
| 工作溫度 | -40C to +125C | [DATA_NEEDED: Operating Temperature Range] |
| 封裝 | 48-TSOP I | 44-SO (SOP-44) |
| 安裝類型 | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | [DATA_NEEDED: Program/Erase Cycles] |
| Data Retention | >20 years (typical for family) | [DATA_NEEDED: Data Retention] |
| Ready/Busy Output | Yes | — |
| RoHS 狀態 | Compliant (E suffix = lead-free/RoHS) | [DATA_NEEDED: RoHS Status] |
| Programming Supply | — | No 12 V VPP required (5.0 V programming) |
| Command Set | — | JEDEC standard compatible |
| Active Read Current | — | [DATA_NEEDED: Active Current] |
| Standby Current | — | [DATA_NEEDED: Standby Current] |
| Block Protection | — | Hardware block protection |
| MSL 等級 | — | [DATA_NEEDED: Moisture Sensitivity Level] |