M29F800FT55N3E2 vs M29W800FB70N3E Perbandingan
Perbandingan bersamaan detil M29F800FT55N3E2 dari Micron Technology dan M29W800FB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29F800FT55N3E2 | M29W800FB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 8 Mbit (8388608 bits) |
| Access Time | 55 ns | 70 ns |
| Tegangan Pemuat | 5 V | — |
| Antarmuka | Parallel | Parallel |
| Boot Block Architecture | Top Boot Block | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket | 48-TSOP I | 48-TSOP (12 x 20 mm), TSOP I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | — |
| Data Retention | >20 years (typical for family) | — |
| Ready/Busy Output | Yes | — |
| Status RoHS | Compliant (E suffix = lead-free/RoHS) | RoHS compliant (plastic TSOP-48) |
| Organisasi | — | 512K x 16 / 1M x 8 |
| Lebar Bus Data | — | x8/x16 (BYTE# selectable) |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase and read |
| Programming Time | — | 10 us per byte/word (typical) |
| Memory Blocks | — | 19 blocks, 1 boot block (bottom - FB configuration) |
| Jumlah Pin | — | 48 |
| Product Longevity Program | — | No |
| FBGA Code | — | N/A |
| Chipset Validation | — | N/A |