M29F800FT55N3E2 vs M29W800FB70N3E 比較
詳細並排比較 M29F800FT55N3E2 由 Micron Technology 與 M29W800FB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F800FT55N3E2 | M29W800FB70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NOR Flash | NOR Flash |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 8 Mbit (8388608 bits) |
| Access Time | 55 ns | 70 ns |
| 供應電壓 | 5 V | — |
| 介面 | Parallel | Parallel |
| Boot Block Architecture | Top Boot Block | — |
| 工作溫度 | -40C to +125C | -40C to +125C |
| 封裝 | 48-TSOP I | 48-TSOP (12 x 20 mm), TSOP I |
| 安裝類型 | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | — |
| Data Retention | >20 years (typical for family) | — |
| Ready/Busy Output | Yes | — |
| RoHS 狀態 | Compliant (E suffix = lead-free/RoHS) | RoHS compliant (plastic TSOP-48) |
| 組織 | — | 512K x 16 / 1M x 8 |
| 資料匯流排寬度 | — | x8/x16 (BYTE# selectable) |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase and read |
| Programming Time | — | 10 us per byte/word (typical) |
| Memory Blocks | — | 19 blocks, 1 boot block (bottom - FB configuration) |
| 腳位數 | — | 48 |
| Product Longevity Program | — | No |
| FBGA Code | — | N/A |
| Chipset Validation | — | N/A |