M29W160ET70N3E vs M29DW323DB70N3E Perbandingan

Perbandingan bersamaan detil M29W160ET70N3E dari Micron Technology dan M29DW323DB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W160ET70N3E M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron

M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron

M29W160ET70N3E ✓ Aktif
Micron Technology
M29DW323DB70N3E M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29W160ET70N3E M29DW323DB70N3E
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash (Parallel) Flash - NOR
Ukuran Memori 16 Mbit —
Organisasi 2M x 8 / 1M x 16 —
Access Time 70 ns 70 ns
Antarmuka Parallel Parallel
Tegangan Pemuat 3 V / 3.3 V (nominal) 3 V class (per manufacturer datasheet)
Boot Block Location Top boot Bottom (DB variant)
Paket 48-TSOP 48-TSOP I
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified —
Suhu Kerja [DATA_NEEDED: operating temperature range] -40C to +125C
Bus Width Selection BYTE# pin, x8 or x16 —
Sector Protection Hardware boot block protection —
Programming Type Automatic program and erase —
Packing Tray (RoHS-compliant package, standard packing) —
Status RoHS Compliant (E suffix) [DATA_NEEDED: RoHS status]
Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: data retention] —
Memory Format — FLASH
Technology — FLASH - NOR Memory IC
Density — 32 Mb (4M x 8, 2M x 16)
Memory Organization — 4M x 8 / 2M x 16
Byte/Word Organization Select — Yes (BYTE pin)
Applications Domain — Embedded code storage / XIP
Standard Pack Quantity — [DATA_NEEDED: standard pack quantity]

Spek dan Sumber

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