M29W160ET70N3E vs M29DW323DB70N3E 比較

詳細並排比較 M29W160ET70N3E 由 Micron Technology 與 M29DW323DB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W160ET70N3E M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron

M29W160ET70N3E - 16Mb 3V Parallel NOR Flash 70ns TSOP48 | Micron

M29W160ET70N3E ✓ 啟用中
Micron Technology
M29DW323DB70N3E M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E - 32Mb NOR Flash 70ns 48-TSOP | Micron

M29DW323DB70N3E ✓ 啟用中

規格比較

參數 M29W160ET70N3E M29DW323DB70N3E
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash (Parallel) Flash - NOR
記憶體容量 16 Mbit —
組織 2M x 8 / 1M x 16 —
Access Time 70 ns 70 ns
介面 Parallel Parallel
供應電壓 3 V / 3.3 V (nominal) 3 V class (per manufacturer datasheet)
Boot Block Location Top boot Bottom (DB variant)
封裝 48-TSOP 48-TSOP I
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified —
工作溫度 [DATA_NEEDED: operating temperature range] -40C to +125C
Bus Width Selection BYTE# pin, x8 or x16 —
Sector Protection Hardware boot block protection —
Programming Type Automatic program and erase —
Packing Tray (RoHS-compliant package, standard packing) —
RoHS 狀態 Compliant (E suffix) [DATA_NEEDED: RoHS status]
Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: data retention] —
Memory Format — FLASH
Technology — FLASH - NOR Memory IC
Density — 32 Mb (4M x 8, 2M x 16)
Memory Organization — 4M x 8 / 2M x 16
Byte/Word Organization Select — Yes (BYTE pin)
Applications Domain — Embedded code storage / XIP
Standard Pack Quantity — [DATA_NEEDED: standard pack quantity]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價