M29W400FT55N3E vs M29W400FB55N3F Perbandingan

Perbandingan bersamaan detil M29W400FT55N3E dari Micron Technology dan M29W400FB55N3F dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W400FT55N3E M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E ✓ Aktif
Micron Technology
M29W400FB55N3F M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FB55N3F ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29W400FT55N3E M29W400FB55N3F
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori Flash - NOR Memory IC NOR Flash
Ukuran Memori 4 Mbit 4 Mbit
Antarmuka Parallel Parallel (asynchronous)
Access Time 55 ns 55 ns
Supply Voltage (VCC) 2.7 V to 3.6 V (program, erase and read) 2.7 V to 3.6 V
Sector Size 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) —
Boot Block Position Top (FT suffix) —
Suhu Kerja -40C to +125C [DATA_NEEDED: operating temperature range]
Temperature Grade Automotive —
Paket 48-TSOP I 48-pin TSOP I (12 x 20 mm)
Number of Terminals 48 —
Package Code / Shape TSSOP / Rectangular —
Tipe Mounting Surface Mount Surface Mount
Tingkat Sensitivitas Kekeringan (MSL) 3 (168 Hours) —
Packaging Tray Tape & Reel (TR)
Peak Reflow Time 30 s max —
Companion Access-Time Grade 55 ns and 70 ns versions available in family —
Organisasi — 512K x8 / 256K x16
Program/Erase Supply — Single 2.7 V to 3.6 V
Byte/Word Select — BYTE# pin
Block Architecture — Boot block with hardware sector protection
Program Suspend/Erase Suspend — Supported
Lead-Free / RoHS — Yes (F suffix = lead-free RoHS-compliant)
Endurance — [DATA_NEEDED: program/erase cycles per block]
Data Retention — [DATA_NEEDED: retention years]

Spek dan Sumber

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