M29W800FB70N3E vs M29W800FB70ZA3SE Perbandingan

Perbandingan bersamaan detil M29W800FB70N3E dari Micron Technology dan M29W800FB70ZA3SE dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W800FB70N3E M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E ✓ Aktif
Micron Technology
M29W800FB70ZA3SE M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron

M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron

M29W800FB70ZA3SE Obsolete

Perbandingan Spesifikasi

Parameter Umum M29W800FB70N3E M29W800FB70ZA3SE
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Obsolete
Tipe Memori NOR Flash NOR Flash, Parallel
Density 8 Mbit (8388608 bits) —
Organisasi 512K x 16 / 1M x 8 1 M x 8 / 512 K x 16
Lebar Bus Data x8/x16 (BYTE# selectable) —
Access Time 70 ns 70 ns
Supply Voltage (VCC) up to 3.6 V for program, erase and read —
Programming Time 10 us per byte/word (typical) —
Memory Blocks 19 blocks, 1 boot block (bottom - FB configuration) —
Antarmuka Parallel Parallel, address/data bus
Suhu Kerja -40C to +125C [DATA_NEEDED: operating temperature range]
Paket 48-TSOP (12 x 20 mm), TSOP I 48-TFBGA (6 x 8 mm)
Jumlah Pin 48 —
Tipe Mounting Surface Mount Surface Mount
Status RoHS RoHS compliant (plastic TSOP-48) [DATA_NEEDED: RoHS status]
Product Longevity Program No —
FBGA Code N/A —
Chipset Validation N/A —
Ukuran Memori — 8 Mbit
Tegangan Pemuat — 3 V / 3.3 V (2.7 V to 3.6 V class)
Technology — SLC NOR
Boot Block Architecture — Bottom boot block (FB)
Qualification — AEC-Q100 automotive
Packaging — Tray
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]
Active Read Current — [DATA_NEEDED: ICC read]
Standby Current — [DATA_NEEDED: ICC standby]
Moisture Sensitivity Level — [DATA_NEEDED: MSL]

Spek dan Sumber

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