M29W800FB70N3E vs M29W800FT70N3E Perbandingan
Perbandingan bersamaan detil M29W800FB70N3E dari Micron Technology dan M29W800FT70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W800FB70N3E | M29W800FT70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash (Parallel) |
| Density | 8 Mbit (8388608 bits) | 8 Mbit |
| Organisasi | 512K x 16 / 1M x 8 | 1M x 8 / 512K x 16 |
| Lebar Bus Data | x8/x16 (BYTE# selectable) | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase and read | 2.7 V to 3.6 V |
| Programming Time | 10 us per byte/word (typical) | — |
| Memory Blocks | 19 blocks, 1 boot block (bottom - FB configuration) | — |
| Antarmuka | Parallel | Parallel, address/data bus |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket | 48-TSOP (12 x 20 mm), TSOP I | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) |
| Jumlah Pin | 48 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | RoHS compliant (plastic TSOP-48) | [DATA_NEEDED: RoHS status] |
| Product Longevity Program | No | — |
| FBGA Code | N/A | — |
| Chipset Validation | N/A | — |
| Programming / Erase Supply | — | Single supply at VCC (2.7 V to 3.6 V) |
| Boot Block Location | — | Top boot block (FT variant) |
| Bus Width | — | 8-bit or 16-bit (BYTE pin selectable) |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Block Organization | — | [DATA_NEEDED: block size/organization] |