M29W800FB70N3E vs M29W800FT70N3E 比較

詳細並排比較 M29W800FB70N3E 由 Micron Technology 與 M29W800FT70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W800FB70N3E M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E - 8Mbit 3V Parallel NOR Flash 70ns | Micron

M29W800FB70N3E ✓ 啟用中
Micron Technology
M29W800FT70N3E M29W800FT70N3E - 8Mbit 70ns Parallel NOR Flash | Micron

M29W800FT70N3E - 8Mbit 70ns Parallel NOR Flash | Micron

M29W800FT70N3E ✓ 啟用中

規格比較

參數 M29W800FB70N3E M29W800FT70N3E
品牌 Micron Technology Micron Technology
類別 Memory ICs Flash
生命週期狀態 啟用中 啟用中
記憶體類型 NOR Flash NOR Flash (Parallel)
Density 8 Mbit (8388608 bits) 8 Mbit
組織 512K x 16 / 1M x 8 1M x 8 / 512K x 16
資料匯流排寬度 x8/x16 (BYTE# selectable) —
Access Time 70 ns 70 ns
Supply Voltage (VCC) up to 3.6 V for program, erase and read 2.7 V to 3.6 V
Programming Time 10 us per byte/word (typical) —
Memory Blocks 19 blocks, 1 boot block (bottom - FB configuration) —
介面 Parallel Parallel, address/data bus
工作溫度 -40C to +125C -40C to +125C
封裝 48-TSOP (12 x 20 mm), TSOP I 48-TSOP I (12 x 20 mm, 0.5 mm pitch)
腳位數 48 —
安裝類型 Surface Mount Surface Mount
RoHS 狀態 RoHS compliant (plastic TSOP-48) [DATA_NEEDED: RoHS status]
Product Longevity Program No —
FBGA Code N/A —
Chipset Validation N/A —
Programming / Erase Supply — Single supply at VCC (2.7 V to 3.6 V)
Boot Block Location — Top boot block (FT variant)
Bus Width — 8-bit or 16-bit (BYTE pin selectable)
Standby Current — [DATA_NEEDED: standby current]
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Data Retention — [DATA_NEEDED: data retention]
Block Organization — [DATA_NEEDED: block size/organization]

資料表與資源

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