M29W800FB70ZA3SF vs M29W800FB70ZA3SE Perbandingan
Perbandingan bersamaan detil M29W800FB70ZA3SF dari Micron Technology dan M29W800FB70ZA3SE dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29W800FB70ZA3SF - 8Mb 3V Parallel NOR Flash 70ns | Micron
M29W800FB70ZA3SF ✓ AktifMicron Technology
M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron
M29W800FB70ZA3SE ObsoletePerbandingan Spesifikasi
| Parameter Umum | M29W800FB70ZA3SF | M29W800FB70ZA3SE |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Density | 8 Mb (1 MB) | — |
| Memory Organization | 1M x 8 / 512K x 16 | — |
| Tipe Antarmuka | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Boot Block Location | Bottom boot (FB) | — |
| Paket | 48-TFBGA (6x8) | 48-TFBGA (6 x 8 mm) |
| Ball Pitch | [DATA_NEEDED: ball pitch] | — |
| Suhu Kerja | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Tipe Mounting | Surface Mount | Surface Mount |
| Byte/Word Organization Pin | Yes (BYTE pin selects x8/x16) | — |
| Programming Time | [DATA_NEEDED: programming time] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| XIP Support | Yes (parallel random-access, execute-in-place capable) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Reel Option | Available (M29W800FB70ZA3SF TR) | — |
| Tipe Memori | — | NOR Flash, Parallel |
| Ukuran Memori | — | 8 Mbit |
| Organisasi | — | 1 M x 8 / 512 K x 16 |
| Tegangan Pemuat | — | 3 V / 3.3 V (2.7 V to 3.6 V class) |
| Technology | — | SLC NOR |
| Boot Block Architecture | — | Bottom boot block (FB) |
| Antarmuka | — | Parallel, address/data bus |
| Qualification | — | AEC-Q100 automotive |
| Packaging | — | Tray |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |
| Standby Current | — | [DATA_NEEDED: ICC standby] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL] |