M29W800FB70ZA3SF vs M29W800FB70ZA3SE 比較
詳細並排比較 M29W800FB70ZA3SF 由 Micron Technology 與 M29W800FB70ZA3SE 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron
M29W800FB70ZA3SE Obsolete規格比較
| 參數 | M29W800FB70ZA3SF | M29W800FB70ZA3SE |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | Obsolete |
| Density | 8 Mb (1 MB) | — |
| Memory Organization | 1M x 8 / 512K x 16 | — |
| 介面類型 | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| Boot Block Location | Bottom boot (FB) | — |
| 封裝 | 48-TFBGA (6x8) | 48-TFBGA (6 x 8 mm) |
| Ball Pitch | [DATA_NEEDED: ball pitch] | — |
| 工作溫度 | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| 安裝類型 | Surface Mount | Surface Mount |
| Byte/Word Organization Pin | Yes (BYTE pin selects x8/x16) | — |
| Programming Time | [DATA_NEEDED: programming time] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| XIP Support | Yes (parallel random-access, execute-in-place capable) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Reel Option | Available (M29W800FB70ZA3SF TR) | — |
| 記憶體類型 | — | NOR Flash, Parallel |
| 記憶體容量 | — | 8 Mbit |
| 組織 | — | 1 M x 8 / 512 K x 16 |
| 供應電壓 | — | 3 V / 3.3 V (2.7 V to 3.6 V class) |
| Technology | — | SLC NOR |
| Boot Block Architecture | — | Bottom boot block (FB) |
| 介面 | — | Parallel, address/data bus |
| Qualification | — | AEC-Q100 automotive |
| Packaging | — | Tray |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |
| Standby Current | — | [DATA_NEEDED: ICC standby] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL] |