M29W800FT70ZA3SF vs M29W800FB70ZA3SE Perbandingan

Perbandingan bersamaan detil M29W800FT70ZA3SF dari Micron Technology dan M29W800FB70ZA3SE dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W800FT70ZA3SF M29W800FT70ZA3SF - 8Mbit NOR Flash 70ns TFBGA48 | Micron

M29W800FT70ZA3SF - 8Mbit NOR Flash 70ns TFBGA48 | Micron

M29W800FT70ZA3SF ✓ Aktif
Micron Technology
M29W800FB70ZA3SE M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron

M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron

M29W800FB70ZA3SE Obsolete

Perbandingan Spesifikasi

Parameter Umum M29W800FT70ZA3SF M29W800FB70ZA3SE
Merek Micron Technology Micron Technology
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Obsolete
Tipe Memori NOR Flash NOR Flash, Parallel
Density 8 Mbit —
Antarmuka Parallel Parallel, address/data bus
Access Time 70 ns 70 ns
Tegangan Pemuat 2.7 V to 3.6 V 3 V / 3.3 V (2.7 V to 3.6 V class)
Suhu Kerja -40C to +125C [DATA_NEEDED: operating temperature range]
Paket 48-TFBGA (6 x 8 mm) 48-TFBGA (6 x 8 mm)
Tipe Mounting Surface Mount Surface Mount
Boot Block Configuration Top boot block (FT) —
Memory Organization [DATA_NEEDED: memory organization x8/x16] —
Program/Erase Cycles [DATA_NEEDED: endurance cycles] —
Data Retention [DATA_NEEDED: data retention years] —
Active Read Current [DATA_NEEDED: active read current] [DATA_NEEDED: ICC read]
Standby Current [DATA_NEEDED: standby current] [DATA_NEEDED: ICC standby]
Package Body Size 6 x 8 mm —
Ball Pitch 0.80 mm —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Ukuran Memori — 8 Mbit
Organisasi — 1 M x 8 / 512 K x 16
Technology — SLC NOR
Boot Block Architecture — Bottom boot block (FB)
Qualification — AEC-Q100 automotive
Packaging — Tray
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]
Moisture Sensitivity Level — [DATA_NEEDED: MSL]

Spek dan Sumber

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