M29W800FT70ZA3SF vs M29W800FB70ZA3SE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W800FT70ZA3SF disebabkan oleh Micron Technology dan M29W800FB70ZA3SE disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
M29W800FB70ZA3SE - 8Mbit NOR Flash 70ns 48-TFBGA | Micron
M29W800FB70ZA3SE ObsoletePengandingan Spesifikasi
| Parametr | M29W800FT70ZA3SF | M29W800FB70ZA3SE |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Ingatan | NOR Flash | NOR Flash, Parallel |
| Density | 8 Mbit | — |
| Antaramuka | Parallel | Parallel, address/data bus |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | 3 V / 3.3 V (2.7 V to 3.6 V class) |
| Suhu Operasi | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 48-TFBGA (6 x 8 mm) | 48-TFBGA (6 x 8 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Boot Block Configuration | Top boot block (FT) | — |
| Memory Organization | [DATA_NEEDED: memory organization x8/x16] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: data retention years] | — |
| Active Read Current | [DATA_NEEDED: active read current] | [DATA_NEEDED: ICC read] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: ICC standby] |
| Package Body Size | 6 x 8 mm | — |
| Ball Pitch | 0.80 mm | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Saiz Ingatan | — | 8 Mbit |
| Organisasi | — | 1 M x 8 / 512 K x 16 |
| Technology | — | SLC NOR |
| Boot Block Architecture | — | Bottom boot block (FB) |
| Qualification | — | AEC-Q100 automotive |
| Packaging | — | Tray |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL] |