MPX2200DP vs MPX2100D Perbandingan
Perbandingan bersamaan detil MPX2200DP dari NXP Semiconductors dan MPX2100D dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MPX2200DP | MPX2100D |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Motorola) | — |
| Series | MPX2200 | — |
| Tipe Pengukur | Differential Pressure Sensor (Piezoresistive) | — |
| Operating Pressure Range | 0 kPa to 200 kPa (0 PSI to 29.01 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Tipe Output | Analog Wheatstone Bridge (ratiometric) | Analog ratiometric Wheatstone bridge (millivolts) |
| Output Span | 0 mV to 40 mV at 10 V excitation | — |
| Sensitivity (nominal) | 0.2 mV/kPa | — |
| Pressure Port | Dual Male Tube, 0.19 in (4.93 mm) | — |
| Port Configuration | DP - Dual Port (differential) | — |
| Supply Voltage (recommended) | 10 V DC | — |
| Supply Voltage (max input) | 16 V DC | — |
| Suhu Kerja | -40C to +125C | — |
| Paket / Case | 4-SIP Module (Through-Hole) | — |
| Tipe Mounting | Through Hole | Through-hole SIP module |
| Status RoHS | Compliant | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Minimum Order Quantity | 100 (tray pack) | — |
| Min. Package Quantity | 20 (tray) | — |
| Pressure Type | — | Differential |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Paket | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| Rentang Suhu Kerja | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |
| Linearity | — | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |