MPX2200DP vs MPX2100D Karşılaştırma
Ayrıntılı yan yana karşılaştırma MPX2200DP tarafından NXP Semiconductors ve MPX2100D tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | MPX2200DP | MPX2100D |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Motorola) | — |
| Series | MPX2200 | — |
| Duyarlılık Türü | Differential Pressure Sensor (Piezoresistive) | — |
| Operating Pressure Range | 0 kPa to 200 kPa (0 PSI to 29.01 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Çıkış Türü | Analog Wheatstone Bridge (ratiometric) | Analog ratiometric Wheatstone bridge (millivolts) |
| Output Span | 0 mV to 40 mV at 10 V excitation | — |
| Sensitivity (nominal) | 0.2 mV/kPa | — |
| Pressure Port | Dual Male Tube, 0.19 in (4.93 mm) | — |
| Port Configuration | DP - Dual Port (differential) | — |
| Supply Voltage (recommended) | 10 V DC | — |
| Supply Voltage (max input) | 16 V DC | — |
| İşletim Sıcaklığı | -40C to +125C | — |
| Paket / Kas | 4-SIP Module (Through-Hole) | — |
| Montaj Türü | Through Hole | Through-hole SIP module |
| RoHS Durumu | Compliant | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Minimum Order Quantity | 100 (tray pack) | — |
| Min. Package Quantity | 20 (tray) | — |
| Pressure Type | — | Differential |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Paket | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| İşletim Sıcaklığı Aralığı | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |
| Linearity | — | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |