MPX2200DP vs MPX2100D Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MPX2200DP disebabkan oleh NXP Semiconductors dan MPX2100D disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MPX2200DP | MPX2100D |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Motorola) | — |
| Series | MPX2200 | — |
| Jenis Sensus | Differential Pressure Sensor (Piezoresistive) | — |
| Operating Pressure Range | 0 kPa to 200 kPa (0 PSI to 29.01 PSI) | 0 kPa to 100 kPa (0 to 14.5 psi) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Jenis Output | Analog Wheatstone Bridge (ratiometric) | Analog ratiometric Wheatstone bridge (millivolts) |
| Output Span | 0 mV to 40 mV at 10 V excitation | — |
| Sensitivity (nominal) | 0.2 mV/kPa | — |
| Pressure Port | Dual Male Tube, 0.19 in (4.93 mm) | — |
| Port Configuration | DP - Dual Port (differential) | — |
| Supply Voltage (recommended) | 10 V DC | — |
| Supply Voltage (max input) | 16 V DC | — |
| Suhu Operasi | -40C to +125C | — |
| Kemasan / Case | 4-SIP Module (Through-Hole) | — |
| Jenis Pemasangan | Through Hole | Through-hole SIP module |
| Status RoHS | Compliant | Compliant [DATA_NEEDED: confirm from NXP product page] |
| Minimum Order Quantity | 100 (tray pack) | — |
| Min. Package Quantity | 20 (tray) | — |
| Pressure Type | — | Differential |
| Full-Scale Span (Typical) | — | 40 mV at 10 V excitation |
| Sensitivity (Nominal) | — | 0.4 mV/kPa |
| Supply Voltage (Recommended) | — | 10 V DC |
| Supply Voltage (Maximum) | — | 16 V DC |
| Pressure Port Configuration | — | Dual axial ports (differential) |
| Kemasan | — | 4-SIP Unibody (UNIBODY4F), 2.54 mm pitch |
| Package Body Dimensions | — | 15.56 mm x 15.56 mm x 5.33 mm |
| Gambaran Suhu Operasi | — | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| On-Chip Temperature Compensation | — | Yes (factory laser-trimmed) |
| Technology | — | Silicon piezoresistive MEMS strain-gauge bridge |
| Diaphragm Material | — | Silicon [DATA_NEEDED: confirm] |
| Linearity | — | 0.1% to 0.3% typical [DATA_NEEDED: confirm] |