MRF5S19100HR5 vs MRF5S19100HR Perbandingan
Perbandingan bersamaan detil MRF5S19100HR5 dari NXP Semiconductors dan MRF5S19100HR dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MRF5S19100HR5 | MRF5S19100HR |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Tipe Transistor | LDMOS (RF Power) | — |
| Technology | N-Channel MOSFET | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 22 W | — |
| Power Gain at Test | 13.9 dB | — |
| Drain-Source Voltage Rated (Vdss) | 65 V | — |
| Test Voltage (Vd) | 28 V | — |
| Test Current (Id) | 1 A | — |
| Paket / Case | NI-780 (3-pin ceramic flange) | — |
| Supplier Device Package | NI-780 | — |
| Tipe Mounting | Chassis Mount / Flange | Flange / bolt-down, surface-mount RF |
| Configuration | Single N-Channel | — |
| Part Status | Obsolete | — |
| Status RoHS | [DATA_NEEDED: rohs status] | Compliant (per NXP product page) |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| ESD Protection | Yes (per datasheet) | Gate-source ESD diodes integrated |
| Channel Temperature (Tj max) | [DATA_NEEDED: junction temp absolute maximum] | — |
| Manufacturer | — | NXP Semiconductors |
| Part Family | — | MRF5S19090 / MRF5S19100 |
| Device Type | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Frequency Range | — | 1930 - 1990 MHz |
| Output Power (Avg) | — | 22 W (2-carrier N-CDMA) |
| Output Power (PEP) | — | 100 W (typical, single tone) |
| Power Gain | — | 13.9 dB (typical at Pout = 22 W) |
| Drain Efficiency | — | >30% (typical, 2-carrier) |
| Drain-Source Voltage (Max) | — | 65 V |
| Drain Operating Voltage | — | 28 V nominal |
| Quiescent Current (IDQ) | — | 1000 mA |
| Gate-Source Voltage (Max) | — | [DATA_NEEDED: VGS maximum rating] |
| Suhu Hubung Kerja | — | -40C to +200C |
| Paket | — | NI-780 (ceramic flange) |
| Polarity / Channel | — | N-Channel, dual-die |
| Bebas Halogen | — | [DATA_NEEDED: halogen-free status] |
| Storage Temperature | — | -65C to +200C (per NXP RF Power standard) |