MRF5S19100HR5 vs MRF5S19100HR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF5S19100HR5 sa pamamagitan ng NXP Semiconductors at MRF5S19100HR sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MRF5S19100HR5 | MRF5S19100HR |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Uri ng Transistor | LDMOS (RF Power) | — |
| Technology | N-Channel MOSFET | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 22 W | — |
| Power Gain at Test | 13.9 dB | — |
| Drain-Source Voltage Rated (Vdss) | 65 V | — |
| Test Voltage (Vd) | 28 V | — |
| Test Current (Id) | 1 A | — |
| Packhaging / Kaso | NI-780 (3-pin ceramic flange) | — |
| Supplier Device Package | NI-780 | — |
| Uri ng Pagpapasok | Chassis Mount / Flange | Flange / bolt-down, surface-mount RF |
| Configuration | Single N-Channel | — |
| Part Status | Obsolete | — |
| Tindminan RoHS | [DATA_NEEDED: rohs status] | Compliant (per NXP product page) |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| ESD Protection | Yes (per datasheet) | Gate-source ESD diodes integrated |
| Channel Temperature (Tj max) | [DATA_NEEDED: junction temp absolute maximum] | — |
| Manufacturer | — | NXP Semiconductors |
| Part Family | — | MRF5S19090 / MRF5S19100 |
| Device Type | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Frequency Range | — | 1930 - 1990 MHz |
| Output Power (Avg) | — | 22 W (2-carrier N-CDMA) |
| Output Power (PEP) | — | 100 W (typical, single tone) |
| Power Gain | — | 13.9 dB (typical at Pout = 22 W) |
| Drain Efficiency | — | >30% (typical, 2-carrier) |
| Drain-Source Voltage (Max) | — | 65 V |
| Drain Operating Voltage | — | 28 V nominal |
| Quiescent Current (IDQ) | — | 1000 mA |
| Gate-Source Voltage (Max) | — | [DATA_NEEDED: VGS maximum rating] |
| Temperature ng Junction na Operasyon | — | -40C to +200C |
| Packhaging | — | NI-780 (ceramic flange) |
| Polarity / Channel | — | N-Channel, dual-die |
| Wala sa Halogen | — | [DATA_NEEDED: halogen-free status] |
| Storage Temperature | — | -65C to +200C (per NXP RF Power standard) |