MRF5S19100HR5 vs MRF5S19100HR Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF5S19100HR5 tarafından NXP Semiconductors ve MRF5S19100HR tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF5S19100HR5 MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 Obsolete
NXP Semiconductors
MRF5S19100HR MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19100HR ✓ Aktif

Özellik Karşılaştırması

Parametre MRF5S19100HR5 MRF5S19100HR
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Obsolete Aktif
Transistor Türü LDMOS (RF Power) —
Technology N-Channel MOSFET —
Frequency Band 1.93 GHz to 1.99 GHz —
Output Power (Pout) 22 W —
Power Gain at Test 13.9 dB —
Drain-Source Voltage Rated (Vdss) 65 V —
Test Voltage (Vd) 28 V —
Test Current (Id) 1 A —
Paket / Kas NI-780 (3-pin ceramic flange) —
Supplier Device Package NI-780 —
Montaj Türü Chassis Mount / Flange Flange / bolt-down, surface-mount RF
Configuration Single N-Channel —
Part Status Obsolete —
RoHS Durumu [DATA_NEEDED: rohs status] Compliant (per NXP product page)
Lead Finish [DATA_NEEDED: lead finish] —
ESD Protection Yes (per datasheet) Gate-source ESD diodes integrated
Channel Temperature (Tj max) [DATA_NEEDED: junction temp absolute maximum] —
Manufacturer — NXP Semiconductors
Part Family — MRF5S19090 / MRF5S19100
Device Type — N-Channel Enhancement-Mode Lateral RF Power MOSFET
Frequency Range — 1930 - 1990 MHz
Output Power (Avg) — 22 W (2-carrier N-CDMA)
Output Power (PEP) — 100 W (typical, single tone)
Power Gain — 13.9 dB (typical at Pout = 22 W)
Drain Efficiency — >30% (typical, 2-carrier)
Drain-Source Voltage (Max) — 65 V
Drain Operating Voltage — 28 V nominal
Quiescent Current (IDQ) — 1000 mA
Gate-Source Voltage (Max) — [DATA_NEEDED: VGS maximum rating]
İşletim Jant Sıcaklığı — -40C to +200C
Paket — NI-780 (ceramic flange)
Polarity / Channel — N-Channel, dual-die
Klorürsüz — [DATA_NEEDED: halogen-free status]
Storage Temperature — -65C to +200C (per NXP RF Power standard)

Dökümanlar & Kaynaklar

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