MRF5S19100HR5 vs MRF5S19100HR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRF5S19100HR5 disebabkan oleh NXP Semiconductors dan MRF5S19100HR disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRF5S19100HR5 | MRF5S19100HR |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Jenis Transistor | LDMOS (RF Power) | — |
| Technology | N-Channel MOSFET | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Output Power (Pout) | 22 W | — |
| Power Gain at Test | 13.9 dB | — |
| Drain-Source Voltage Rated (Vdss) | 65 V | — |
| Test Voltage (Vd) | 28 V | — |
| Test Current (Id) | 1 A | — |
| Kemasan / Case | NI-780 (3-pin ceramic flange) | — |
| Supplier Device Package | NI-780 | — |
| Jenis Pemasangan | Chassis Mount / Flange | Flange / bolt-down, surface-mount RF |
| Configuration | Single N-Channel | — |
| Part Status | Obsolete | — |
| Status RoHS | [DATA_NEEDED: rohs status] | Compliant (per NXP product page) |
| Lead Finish | [DATA_NEEDED: lead finish] | — |
| ESD Protection | Yes (per datasheet) | Gate-source ESD diodes integrated |
| Channel Temperature (Tj max) | [DATA_NEEDED: junction temp absolute maximum] | — |
| Manufacturer | — | NXP Semiconductors |
| Part Family | — | MRF5S19090 / MRF5S19100 |
| Device Type | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Frequency Range | — | 1930 - 1990 MHz |
| Output Power (Avg) | — | 22 W (2-carrier N-CDMA) |
| Output Power (PEP) | — | 100 W (typical, single tone) |
| Power Gain | — | 13.9 dB (typical at Pout = 22 W) |
| Drain Efficiency | — | >30% (typical, 2-carrier) |
| Drain-Source Voltage (Max) | — | 65 V |
| Drain Operating Voltage | — | 28 V nominal |
| Quiescent Current (IDQ) | — | 1000 mA |
| Gate-Source Voltage (Max) | — | [DATA_NEEDED: VGS maximum rating] |
| Suhu Hubungan Operasi | — | -40C to +200C |
| Kemasan | — | NI-780 (ceramic flange) |
| Polarity / Channel | — | N-Channel, dual-die |
| Boson Bebas | — | [DATA_NEEDED: halogen-free status] |
| Storage Temperature | — | -65C to +200C (per NXP RF Power standard) |