MRF6S21050LR5 vs MRF6S21050LSR5 Perbandingan
Perbandingan bersamaan detil MRF6S21050LR5 dari NXP Semiconductors dan MRF6S21050LSR5 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S
MRF6S21050LSR5 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MRF6S21050LR5 | MRF6S21050LSR5 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel RF Power MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV6 LDMOS | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (Vdss) | 28 V | — |
| Continuous Drain Current (Id) | 450 mA | — |
| Output Power (Pout) | 11.5 W | 11.5 W CW |
| Power Gain (Gp) | 16 dB at 2.16 GHz | — |
| Operating Frequency | 2.16 GHz (W-CDMA band) | — |
| Test Conditions | 2.16 GHz, 28 V, W-CDMA modulation | — |
| Paket / Case | NI-400 (ceramic flanged) | NI-400S (ceramic, 2-flange) |
| Tipe Mounting | Flange mount, chassis-mount | Surface Mount / Screw-Mount |
| Configuration | Single N-channel | Single, Common Source |
| Kapasitansi Masukan | [DATA_NEEDED: input capacitance] | — |
| Kapasitansi Output | [DATA_NEEDED: output capacitance] | — |
| Thermal Resistance (Rthj-c) | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| Rentang Suhu Kerja | -40C to +150C (junction) | — |
| Level MSL | Not applicable (ceramic flanged) | — |
| Status RoHS | Compliant (per distributor listing) | Compliant |
| ESD Protection | Yes (integrated, per device family) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Drain-Source Voltage (VDS) Maximum | — | 65 V |
| Gate-Source Voltage (VGS) Maximum | — | [DATA_NEEDED: VGS max rating] |
| Nominal Operating Drain Voltage | — | 28 V |
| Typical Operating Frequency | — | 2.16 GHz (2110-2170 MHz W-CDMA band) |
| Power Gain (Gps) | — | 16 dB typical at 2.16 GHz |
| Drain Current (ID) at Test | — | 450 mA |
| Application | — | W-CDMA, TDMA, CDMA, multicarrier base-station PA |
| Lead-Free | — | Yes |
| Operating Mode | — | Class AB |
| MSL Rating | — | [DATA_NEEDED: MSL level] |