MRF6S21050LR5 vs MRF6S21050LSR5 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S21050LR5 sa pamamagitan ng NXP Semiconductors at MRF6S21050LSR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6S21050LR5 - 11.5W RF MOSFET 28V 2.16GHz NI-400 | NXP
MRF6S21050LR5 ✓ NakahandaNXP Semiconductors
MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S
MRF6S21050LSR5 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF6S21050LR5 | MRF6S21050LSR5 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel RF Power MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV6 LDMOS | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (Vdss) | 28 V | — |
| Continuous Drain Current (Id) | 450 mA | — |
| Output Power (Pout) | 11.5 W | 11.5 W CW |
| Power Gain (Gp) | 16 dB at 2.16 GHz | — |
| Operating Frequency | 2.16 GHz (W-CDMA band) | — |
| Test Conditions | 2.16 GHz, 28 V, W-CDMA modulation | — |
| Packhaging / Kaso | NI-400 (ceramic flanged) | NI-400S (ceramic, 2-flange) |
| Uri ng Pagpapasok | Flange mount, chassis-mount | Surface Mount / Screw-Mount |
| Configuration | Single N-channel | Single, Common Source |
| Input na Kapasitans | [DATA_NEEDED: input capacitance] | — |
| Output Kapasitansya | [DATA_NEEDED: output capacitance] | — |
| Thermal Resistance (Rthj-c) | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| Hanay ng Temperature na Operasyon | -40C to +150C (junction) | — |
| Level ng MSL | Not applicable (ceramic flanged) | — |
| Tindminan RoHS | Compliant (per distributor listing) | Compliant |
| ESD Protection | Yes (integrated, per device family) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Drain-Source Voltage (VDS) Maximum | — | 65 V |
| Gate-Source Voltage (VGS) Maximum | — | [DATA_NEEDED: VGS max rating] |
| Nominal Operating Drain Voltage | — | 28 V |
| Typical Operating Frequency | — | 2.16 GHz (2110-2170 MHz W-CDMA band) |
| Power Gain (Gps) | — | 16 dB typical at 2.16 GHz |
| Drain Current (ID) at Test | — | 450 mA |
| Application | — | W-CDMA, TDMA, CDMA, multicarrier base-station PA |
| Lead-Free | — | Yes |
| Operating Mode | — | Class AB |
| MSL Rating | — | [DATA_NEEDED: MSL level] |