MRF6S21050LR5 vs MRF6S21050LSR5 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MRF6S21050LR5 tarafından NXP Semiconductors ve MRF6S21050LSR5 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MRF6S21050LSR5 - 11.5W W-CDMA RF Power MOSFET | NXP | NI-400S
MRF6S21050LSR5 ✓ AktifÖzellik Karşılaştırması
| Parametre | MRF6S21050LR5 | MRF6S21050LSR5 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Transistor Türü | N-Channel RF Power MOSFET (LDMOS) | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | HV6 LDMOS | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (Vdss) | 28 V | — |
| Continuous Drain Current (Id) | 450 mA | — |
| Output Power (Pout) | 11.5 W | 11.5 W CW |
| Power Gain (Gp) | 16 dB at 2.16 GHz | — |
| Operating Frequency | 2.16 GHz (W-CDMA band) | — |
| Test Conditions | 2.16 GHz, 28 V, W-CDMA modulation | — |
| Paket / Kas | NI-400 (ceramic flanged) | NI-400S (ceramic, 2-flange) |
| Montaj Türü | Flange mount, chassis-mount | Surface Mount / Screw-Mount |
| Configuration | Single N-channel | Single, Common Source |
| Giriş Kapasitansı | [DATA_NEEDED: input capacitance] | — |
| Çıkış Kapasitansı | [DATA_NEEDED: output capacitance] | — |
| Thermal Resistance (Rthj-c) | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| İşletim Sıcaklığı Aralığı | -40C to +150C (junction) | — |
| MSL Seviyesi | Not applicable (ceramic flanged) | — |
| RoHS Durumu | Compliant (per distributor listing) | Compliant |
| ESD Protection | Yes (integrated, per device family) | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Drain-Source Voltage (VDS) Maximum | — | 65 V |
| Gate-Source Voltage (VGS) Maximum | — | [DATA_NEEDED: VGS max rating] |
| Nominal Operating Drain Voltage | — | 28 V |
| Typical Operating Frequency | — | 2.16 GHz (2110-2170 MHz W-CDMA band) |
| Power Gain (Gps) | — | 16 dB typical at 2.16 GHz |
| Drain Current (ID) at Test | — | 450 mA |
| Application | — | W-CDMA, TDMA, CDMA, multicarrier base-station PA |
| Lead-Free | — | Yes |
| Operating Mode | — | Class AB |
| MSL Rating | — | [DATA_NEEDED: MSL level] |