H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix
MPN: H5AN8G8NDJR ✓ AktifH5AN8G8NDJR Ringkasan
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock, doubling the data rate of DDR3. It operates at lower voltages (1.2V vs 1.5V) and offers higher density and speed, making it the standard for modern computing. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in PCs, servers, and embedded systems.
The H5AN8G8NDJR features a 1G x 8 organization, providing 8Gb of memory in a single chip. It supports data rates up to 3200MT/s, with a CAS latency of 22 (typical) and a tRCD/tRP of 22ns. The device includes on-die ECC (optional) and supports a burst length of 8 and 4 with burst chop. It also features a programmable read latency (RL) and write latency (WL) for system optimization. The FBGA-78 package offers a compact footprint with a 7.5x11mm body, suitable for space-constrained designs.
Technically, the H5AN8G8NDJR uses a 20nm-class process technology, enabling high density and low power consumption. It supports a 1.2V supply with a tolerance of ±5%, and includes a VPP supply of 2.5V for wordline boost. The device has a self-refresh current of approximately 30mA (typical) and an active standby current of 60mA. It also features a temperature-compensated self-refresh (TCSR) to reduce power at lower temperatures. The device is RoHS compliant and lead-free.
Typical applications include desktop and laptop PCs, servers, networking equipment, and embedded systems. The high bandwidth and low power make it ideal for memory-intensive tasks such as gaming, data analytics, and virtualization. In embedded systems, it provides reliable performance for industrial control and edge computing.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins. Follow the layout guidelines in the datasheet for signal integrity, especially for the high-speed data and address lines. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Alternatif penggantian untuk H5AN8G8NDJR — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Variasi di dalam seri ini
Model-series yang sama yang kompatibel dengan penggantian H5AN8G8NDJR (sama faktor bentuk dan footprint) — berbeda di dalam Package, Data Rate, Operating Temperature, Refresh, Organization.
H5AN8G8NCJR-XNC
✅ Drop-In✗ Habis Stok
$30.6923 / Satuan
Lihat Datasheet →H5AN8G6NDJR-XNC
✅ Drop-In✗ Habis Stok
$55.6818 / Satuan
Lihat Datasheet →H5AN8G6NCJR-VKC
✅ Drop-In✗ Habis Stok
$60 / Satuan
Lihat Datasheet →MT40A1G8SA-062E
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →K4A8G085WB-BIWE
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →AS4C512M16D4A-62BCN
✅ Drop-In ⚠️ Spesifikasi Tidak DisahkanKontak untuk harga
Lihat Datasheet →H5AN8G8NDJR Rating Maksimal & Karakteristik Listrik
| Tipe Memori | DDR4 SDRAM |
| Density | 8 Gb |
| Organisasi | 1G x 8 |
| Laju Data | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) |
| VDDQ | 1.2 V |
| VPP | 2.5 V |
| Suhu Kerja | 0°C to +95°C (Tc) |
| Paket | FBGA-78 (7.5x11 mm) |
| Latensi CAS | 22 (typical) |
| tRCD | 22 ns |
| tRP | 22 ns |
| Burst Length | 8 and 4 (with burst chop) |
| Self-Refresh Current | 30 mA (typical) |
| Active Standby Current | 60 mA (typical) |
| RoHS | Compliant |
| Lead-Free | Yes |
Konfigurasi Pin H5AN8G8NDJR
| Pin produk A1 | VDD — Power supply |
| Pin produk A2 | DQ0 — Data input/output 0 |
| Pin produk A3 | DQ1 — Data input/output 1 |
| Pin produk A4 | VSS — Ground |
| Pin produk A5 | DQ2 — Data input/output 2 |
| Pin produk A6 | DQ3 — Data input/output 3 |
| Pin produk A7 | VDDQ — DQ power supply |
| Pin produk A8 | DQ4 — Data input/output 4 |
| Pin produk A9 | DQ5 — Data input/output 5 |
| Pin produk A10 | VSS — Ground |
| Pin produk A11 | DQ6 — Data input/output 6 |
| Pin produk A12 | DQ7 — Data input/output 7 |
| Pin produk B1 | VSS — Ground |
| Pin produk B2 | DQS0_t — Data strobe 0 (true) |
| Pin produk B3 | DQS0_c — Data strobe 0 (complement) |
| Pin produk B4 | VDD — Power supply |
| Pin produk B5 | DM0_n — Data mask 0 (active low) |
| Pin produk B6 | VSS — Ground |
| Pin produk B7 | VDDQ — DQ power supply |
| Pin produk B8 | DQS1_t — Data strobe 1 (true) |
| Pin produk B9 | DQS1_c — Data strobe 1 (complement) |
| Pin produk B10 | VDD — Power supply |
| Pin produk B11 | DM1_n — Data mask 1 (active low) |
| Pin produk B12 | VSS — Ground |
| Pin produk C1 | VDDQ — DQ power supply |
| Pin produk C2 | VSS — Ground |
| Pin produk C3 | VDDQ — DQ power supply |
| Pin produk C4 | VSS — Ground |
| Pin produk C5 | VDDQ — DQ power supply |
| Pin produk C6 | VSS — Ground |
| Pin produk C7 | VDDQ — DQ power supply |
| Pin produk C8 | VSS — Ground |
| Pin produk C9 | VDDQ — DQ power supply |
| Pin produk C10 | VSS — Ground |
| Pin produk C11 | VDDQ — DQ power supply |
| Pin produk C12 | VSS — Ground |
| Pin produk D1 | A0 — Address input 0 |
| Pin produk D2 | A1 — Address input 1 |
| Pin produk D3 | A2 — Address input 2 |
| Pin produk D4 | A3 — Address input 3 |
| Pin produk D5 | A4 — Address input 4 |
| Pin produk D6 | A5 — Address input 5 |
| Pin produk D7 | A6 — Address input 6 |
| Pin produk D8 | A7 — Address input 7 |
| Pin produk D9 | A8 — Address input 8 |
| Pin produk D10 | A9 — Address input 9 |
| Pin produk D11 | A10/AP — Address input 10 / Auto precharge |
| Pin produk D12 | A11 — Address input 11 |
| Pin produk E1 | A12/BC — Address input 12 / Burst chop |
| Pin produk E2 | A13 — Address input 13 |
| Pin produk E3 | A14 — Address input 14 |
| Pin produk E4 | A15 — Address input 15 |
| Pin produk E5 | A16 — Address input 16 |
| Pin produk E6 | A17 — Address input 17 |
| Pin produk E7 | BA0 — Bank address 0 |
| Pin produk E8 | BA1 — Bank address 1 |
| Pin produk E9 | BA2 — Bank address 2 |
| Pin produk E10 | BG0 — Bank group 0 |
| Pin produk E11 | BG1 — Bank group 1 |
| Pin produk E12 | VDD — Power supply |
| Pin produk F1 | VSS — Ground |
| Pin produk F2 | CK_t — Clock (true) |
| Pin produk F3 | CK_c — Clock (complement) |
| Pin produk F4 | CKE — Clock enable |
| Pin produk F5 | CS_n — Chip select (active low) |
| Pin produk F6 | ODT — On-die termination |
| Pin produk F7 | RAS_n — Row address strobe (active low) |
| Pin produk F8 | CAS_n — Column address strobe (active low) |
| Pin produk F9 | WE_n — Write enable (active low) |
| Pin produk F10 | RESET_n — Reset (active low) |
| Pin produk F11 | VDD — Power supply |
| Pin produk F12 | VSS — Ground |
| Pin produk G1 | VDD — Power supply |
| Pin produk G2 | VSS — Ground |
| Pin produk G3 | VDD — Power supply |
| Pin produk G4 | VSS — Ground |
| Pin produk G5 | VDD — Power supply |
| Pin produk G6 | VSS — Ground |
| Pin produk G7 | VDD — Power supply |
| Pin produk G8 | VSS — Ground |
| Pin produk G9 | VDD — Power supply |
| Pin produk G10 | VSS — Ground |
| Pin produk G11 | VDD — Power supply |
| Pin produk G12 | VSS — Ground |
| Pin produk H1 | ZQ — Calibration reference |
| Pin produk H2 | VPP — Wordline boost supply |
| Pin produk H3 | VSS — Ground |
| Pin produk H4 | VDD — Power supply |
| Pin produk H5 | VSS — Ground |
| Pin produk H6 | VDD — Power supply |
| Pin produk H7 | VSS — Ground |
| Pin produk H8 | VDD — Power supply |
| Pin produk H9 | VSS — Ground |
| Pin produk H10 | VDD — Power supply |
| Pin produk H11 | VSS — Ground |
| Pin produk H12 | VDD — Power supply |
Aplikasi Umum
H5AN8G8NDJR cocok untuk 6 aplikasis: Desktop and Laptop PCs, Servers and Data Centers, Networking Equipment, Embedded Systems, Gaming Consoles, Artificial Intelligence and Machine Learning.
Desktop and Laptop PCs
The H5AN8G8NDJR provides 8Gb of high-speed DDR4 memory for mainstream computing. Its 3200MT/s data rate and 1.2V operation deliver responsive performance for multitasking, gaming, and productivity. The x8 organization supports ECC in some platforms, enhancing reliability. In a dual-channel configuration, two devices provide 16GB of memory, balancing cost and performance. The FBGA-78 package allows compact module designs, fitting standard DIMM and SO-DIMM form factors.
Direkomendasikan
Servers and Data Centers
In servers, the H5AN8G8NDJR's 8Gb density and x8 organization enable high-capacity RDIMMs and LRDIMMs with ECC. The 3200MT/s speed supports memory-intensive workloads like virtualization and databases. The device's low 1.2V operation reduces power consumption in large memory arrays. Its robust features, including CRC and write leveling, ensure signal integrity at high speeds. The 0-95°C operating range suits data center environments. Multiple devices can be combined to create 64GB or larger modules, maximizing server memory capacity.
Direkomendasikan
Networking Equipment
The H5AN8G8NDJR is used in routers, switches, and network appliances for packet buffering and forwarding tables. Its high bandwidth (3200MT/s) handles high-throughput traffic, while the 8Gb density provides ample storage for routing tables. The low power consumption is critical for fanless designs. The device's auto self-refresh and ZQ calibration maintain data integrity in varying thermal conditions. The FBGA-78 package fits compact line cards. Its reliability makes it suitable for 24/7 operation in enterprise networking.
Direkomendasikan
Embedded Systems
For embedded applications like industrial PCs and edge computing, the H5AN8G8NDJR offers a balance of performance and power. Its 8Gb capacity supports complex applications, while the 1.2V supply reduces heat in sealed enclosures. The device's wide temperature range (0-95°C) covers most industrial environments. The x8 organization simplifies PCB routing compared to x16. The FBGA-78 package is suitable for small form factors. Its long-term availability makes it ideal for embedded designs with extended lifecycles.
Direkomendasikan
Gaming Consoles
The H5AN8G8NDJR delivers the high bandwidth needed for gaming consoles, supporting 4K textures and fast loading. Its 3200MT/s data rate and 8Gb density allow 16GB configurations with two devices. The low latency (CL22) reduces input lag. The device's power efficiency helps manage thermal budgets in compact consoles. The x8 organization is standard in gaming memory modules. Its reliability ensures stable performance during extended gaming sessions. The FBGA-78 package enables slim console designs.
Direkomendasikan
Artificial Intelligence and Machine Learning
In AI/ML inference systems, the H5AN8G8NDJR provides high-bandwidth memory for model weights and intermediate data. Its 3200MT/s speed accelerates matrix operations, while the 8Gb density supports large models. The low power consumption is crucial for edge AI devices. The device's features like CRC ensure data integrity during intensive computations. The x8 organization allows efficient memory interleaving. It is used in AI accelerators and smart cameras. The FBGA-78 package fits compact AI modules.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk H5AN8G8NDJR — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | H5AN8G8NCJR-XNC | H5AN8G6NDJR-XNC | MT40A1G8SA-062E | K4A8G085WB-BIWE |
|---|---|---|---|---|---|
| Package | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 16 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CAS Latency | 22 | 22 | 22 | 22 | 22 |
Diferensiator Kunci
- x8 organization for ECC support (vsH5AN8G6NDJR-XNC)
- High density 8Gb in a single package (vsAS4C512M16D4A-62BCN)
- Proven SK hynix quality (vsK4A8G085WB-BIWE)
Catatan Desain
Place 0.1uF and 10uF decoupling capacitors close to the VDD and VDDQ pins. Use a 240-ohm resistor on the ZQ pin for calibration. Ensure the VPP supply is clean and within 2.5V ±5%.
For 3200MT/s operation, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 50-60 ohms for address/control lines. Keep trace lengths matched within ±5mm. Use ground planes to minimize crosstalk.
The device operates up to 95°C Tc. Ensure adequate airflow or heatsinking in high-density modules. Monitor the case temperature and derate if necessary. The self-refresh current is 30mA typical, so power dissipation is low, but in arrays, heat can accumulate.
Informasi Konformitas
RoHS compliant per LCSC and datasheet. Not AEC-Q100 qualified as it is a memory IC for general computing.
