MT41K256M16TW-107 vs K4B4G1646D-BCK0 Perbandingan
Perbandingan bersamaan detil MT41K256M16TW-107 dari Micron Technology dan K4B4G1646D-BCK0 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT41K256M16TW-107 | K4B4G1646D-BCK0 |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $14,10 | — |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Ukuran Memori | 4 Gbit | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Antarmuka | Parallel | — |
| Clock Frequency | 933 MHz (DDR3L-1866) | 800 MHz |
| Access Time | 20 ns | — |
| Tegangan Pemuat | 1.35 V | — |
| Lebar Bus Data | 16 bit | — |
| Paket | 96-FBGA (8x14 mm) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Tipe Mounting | Surface Mount | — |
| Suhu Kerja | 0C to +95C (commercial :P grade) | 0°C to 95°C (Tc) |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Density | — | 4 Gb |
| Number of Banks | — | 8 |
| Laju Data | — | 1600 Mbps per pin |
| Supply Voltage (VDD) | — | 1.35V (1.283V to 1.45V) |
| Supply Voltage (VDDQ) | — | 1.35V (1.283V to 1.45V) |
| Latensi CAS | — | 11 (programmable) |
| Burst Length | — | 8, 4 |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |