N25Q256A83ESFA0F vs N25Q512A83G12A0F Perbandingan

Perbandingan bersamaan detil N25Q256A83ESFA0F dari Micron Technology dan N25Q512A83G12A0F dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
N25Q256A83ESFA0F N25Q256A83ESFA0F - 256Mb SPI NOR Flash 108MHz | Micron

N25Q256A83ESFA0F - 256Mb SPI NOR Flash 108MHz | Micron

N25Q256A83ESFA0F ✓ Aktif
Micron Technology
N25Q512A83G12A0F N25Q512A83G12A0F - 512Mbit SPI NOR Flash 108MHz | Micron

N25Q512A83G12A0F - 512Mbit SPI NOR Flash 108MHz | Micron

N25Q512A83G12A0F ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum N25Q256A83ESFA0F N25Q512A83G12A0F
Merek Micron Technology Micron Technology
Kategori EEPROM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash, Serial SPI Flash - NOR Memory IC
Density 256 Mbit (32 MB) —
Organisasi 32M x 8 128M x 4
Antarmuka SPI, Multiple I/O (Single/Dual/Quad) SPI - Multiple I/O (Standard/Dual/Quad)
Max Clock Frequency 108 MHz —
Tegangan Pemuat 3 V (2.7 V to 3.6 V) 2.7 V to 3.6 V (3V class)
Technology 65nm NOR —
Sector Erase Size 4 KB 4 KB
Suhu Kerja -40C to +125C [DATA_NEEDED: operating temperature range]
Fitur Execute-In-Place (XIP), Advanced Write Protection —
Paket 16-SOIC Wide (16SO) 24-T-PBGA (6x8 mm)
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Grade Industrial —
Memory Capacity — 512 Mbit (64 MB)
Clock Frequency — 108 MHz
Cell Type — SLC
Package Structure — Dual-Die Package (DDP)
Program/Erase Protection — Software and hardware write protection
Endurance — [DATA_NEEDED: program/erase endurance cycles]
Active Read Current — [DATA_NEEDED: active read current]
Standby Current — [DATA_NEEDED: standby current]
Level MSL — [DATA_NEEDED: moisture sensitivity level]

Spek dan Sumber

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